| PART |
Description |
Maker |
| KID65081AF KID65081AP KID65082AF KID65082AP KID650 |
BIPOLAR LINEAR INTEGRATED CIRCUIT (8 HIGH-VOLTAGE HIGH-CURRENT DARLING TON TRANSISTOR ARRAYS) 双极线性集成电路（8个高电压高电流达林震晶体管阵列）
Darlington Driver
|
KEC Holdings
KEC[KEC(Korea Electronics)]
Korea Electronics (KEC)
|
| 1N5070 1N5075 1N5078 1N5100 1N5105 1N5103 1N5104 1 |
POWER ZENERS
45 V, 3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
180 V, 3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
POWER ZENERS 160 V, 3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
POWER ZENERS 36 V, 3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
POWER ZENERS 14 V, 3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
POWER ZENERS 16 V, 3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
POWER ZENERS 30 V, 3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
POWER ZENERS 18 V, 3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
POWER ZENERS 33 V, 3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
POWER ZENERS 56 V, 3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
POWER ZENERS 10 V, 3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
CAP 100PF 100V 5% NP0(C0G) RAD.20 .20X.20 TR-13 20 V, 3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
Power Zeners. 3 Watt 电源齐纳基准源3瓦特
POWER ZENERS 22 V, 3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
POWER ZENERS 220 V, 3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
POWER ZENERS 320 V, 3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
FUSED-IN-GLASS METALLARGICALTY BONDED 3 WAIT ZENER DIODES
|
MICROSEMI CORP-SCOTTSDALE
TE Connectivity, Ltd.
Bourns, Inc.
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
POWER ZENERS
|
| D44H10 D45H11 D44H8 D45H8 D44H D45H10 D44H11 ON027 |
10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 80 VOLTS
Card Edge Connector; No. of Contacts:24; Pitch Spacing:0.156"; Contact Termination:Solder; Leaded Process Compatible:Yes; Mounting Hole Dia:0.128" RoHS Compliant: Yes 10 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB
COMPLEMENTARY SILICON POWER TRANSISTORS 10 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-220AB
10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60/ 80 VOLTS
10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 80 VOLTS
From old datasheet system
|
Motorola Inc
ONSEMI[ON Semiconductor]
MOTOROLA[Motorola Inc]
http://
|
| PBY277 1N1199A 1N1200A 1N1202A 1N1204A 1N1206A 1N3 |
Silicon-Power Rectifiers
Silicon-Power Rectifiers 12 A, 200 V, SILICON, RECTIFIER DIODE, DO-4
Silicon-Power Rectifiers 12 A, 800 V, SILICON, RECTIFIER DIODE, DO-4
Replacement with:PBY272R
|
Diotec Semiconductor AG
DIOTEC[Diotec Semiconductor]
Diotec Elektronische
|
| BD442 BD439 BD441 4130 BD440 -BD441 -BD442 |
Complemetary Silicon Power Transistors(浜?ˉ纭?????浣??)
From old datasheet system
COMPLEMENTARY SILICON POWER TRANSISTORS
Complemetary Silicon Power Transistors(互补硅功率晶体管)
|
STMICROELECTRONICS[STMicroelectronics]
意法半导
|
| 1N3161 1N3161R 1N3162 1N3162R 1N3163 1N3163R 1N316 |
Standard Rectifier (trr more than 500ns)
SILICON POWER RECTIFIER 240 A, 1000 V, SILICON, RECTIFIER DIODE, DO-205AB
SILICON POWER RECTIFIER 300 A, 1000 V, SILICON, RECTIFIER DIODE, DO-205AB
SILICON POWER RECTIFIER 240 A, 300 V, SILICON, RECTIFIER DIODE, DO-205AB
SILICON POWER RECTIFIER 240 A, 800 V, SILICON, RECTIFIER DIODE, DO-205AB
|
MICROSEMI[Microsemi Corporation]
Microsemi, Corp.
|
| 2SC2429 |
SILICON HIGH SPEED TRIPLE DIFFUSED NPN POWER TRANSISTOR 10 AMP,400 VOLT
From old datasheet system
SILICON HIGH SPPED POWER TRANSISTORS 高硅SPPED功率晶体
|
Fujitsu Component Limited.
Fujitsu Microelectronics
Fujitsu Media Devices Limited
Toshiba Semiconductor
Fujitsu Limited
Fujitsu, Ltd.
|
| NE5531079A-T1 NE5531079A-T1-A NE5531079A-T1A-A |
7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS
SILICON POWER MOS FET
|
California Eastern Labs
|
| 2SB805 2SB806 2SB806-T1 2SB805-T2 2SB805-T1 2SB806 |
Low frequency power amplification
Silicon transistor
PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
|
NEC[NEC]
|
| NTE5906 NTE6005 NTE5980 NTE5907 NTE5995 NTE5986 NT |
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 400V. Average forward current 40A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1600V. Average forward current 40A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 1000V. Average forward current 40A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1000V. Average forward current 40A.
Receptacle With A Wire Wrap Tail
Silicon Power Rectifier Diode / 40 Amp
Silicon Power Rectifier Diode 40 Amp
NTE5906, NTE5907, NTE5980 thru NTE6005 Silicon Power Rectifier Diode, 40 Amp
40 A, 300 V, SILICON, RECTIFIER DIODE
40 A, 200 V, SILICON, RECTIFIER DIODE
|
NTE Electronics, Inc.
NTE[NTE Electronics]
|
| BUV21 BUV21_D ON0257 |
From old datasheet system
40 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 250 WATTS
SITCHMODE Series NPN Silicon Power Transistor
|
Motorola, Inc.
ON Semiconductor
|
| 2SD2163 |
Silicon power transistor
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED HIGH-CURRENT SWITCHING
|
NEC
|
|
